
Dielectric Films for Advanced Microelectronics
by Baklanov, Mikhail; Maex, Karen; Green, Martin-
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Summary
Author Biography
Mikhail R. Baklanov, Principal Scientist, Silicon Process and Device Technology Division, IMEC, Leuven, Belgium
IMEC is the largest independent microelectronics R&D centre in Europe, with over 1250 staff. R&D ranges from the design of complex single-chip and single-package systems for telecommunications and multimedia, new process technologies for optoelectronics, photovoltaics, area-array packing, etc.
Table of Contents
Series Preface | |
Preface | |
Low and Ultralow Dielectric Constant Films Prepared by Plasma-Enhanced Chemical Vapor Deposition | |
Spin-On Dielectric Materials | |
Porosity of Low Dielectric Constant Materials | |
Positron Annihilation Spectroscopy | |
Structure Characterization of Nanoporous Interlevel Dielectric Thin Films with X-ray and Neutron Radiation | |
Ellipsometric Porosimetry | |
Mechanical and Transport Properties of Low-k Dielectrics | |
Integration of low-k dielectric films in damascene processes | |
ONO structures and oxynitrides in modern microelectronics. Material science, characterization and application | |
High Dielectric constant Materials | |
Material Engineering of High-k Gate Dielectrics | |
Physical Characterisation of ultra-thin high-k dielectric | |
Electrical Characterization of Advanced Gate Dielectrics | |
Medium dielectric constant materials | |
Integration Issues of High-k Gate Dielectrics | |
Dielectric films for interconnects (packaging) | |
Anisotropic Conductive Film (ACF) for Advanced Microelectronic Interconnects | |
Index | |
Table of Contents provided by Publisher. All Rights Reserved. |
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